作者:聚创厦大考研网-小厦老师 点击量: 685 发布时间: 2018-08-15 17:03 微信号: H17720740258
黄巍,2008年毕业于上海复旦大学微电子系,获理学博士学位,同年到韩国高丽大学电子系参加博士后工作。2009年7月加入厦门大学物理系,任助理教授。目前的研究方向是与锗相关的电子及光电子器件。
1.Wei Huang, Guo-Ping Ru, C. Detavernier, R. L. Van Meirhaeghe, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Yttrium silicide formation and its contact properties on Si(100). Microelectronics Engineering, 85, 131 (2008).
2.Wei Huang, Guo-Ping Ru, C. Detavernier, R. L. Van Meirhaeghe, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Effect of Pt addition on the stress of NiSi film formed on Si(100), Chinese Journal of Semiconductors, 28, 635 (2007).
3.W. Huang, G.P. Ru, Y.L. Jiang, X.P. Qu, B.Z. Li, R. Liu, Improvement of Er-silicide formation on Si(100) by W capping. Thin Solid Films, 516, 4252 (2008).
4.W. Huang, G.P. Ru, X.P. Qu, Y.L. Jiang, B.Z. Li, Erbium silicide formation and its contact properties on Si(100). Journal of Vacuum Science and Technology B, 26, 164 (2008).
5.W. Huang, Y.L. Min, G.P. Ru, X.P. Qu, Y.L. Jiang, B.Z. Li, Effect of erbium interlayer on nickel silicide formation on Si(100). Applied Surface Science, 254, 2120 (2008).
6.Yu-Long Jiang, Guo-Ping Ru, Wei Huang, Xin-Ping Qu, Bing-Zong Li, Aditya Agarwal, Gary Cai, John Poate, Christophe Detavernier, R L Van Meirhaeghe, Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation, Semiconductor Science and Technology. 20, 716 (2005)
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