厦门大学物理科学与技术学院物理学系导师介绍：李书平
作者：聚创厦大考研网-小厦老师
点击量： 614
发布时间： 2018-08-15 16:59
微信号： H17720740258
姓名
李书平
职称
教授
E-mail
lsp@xmu.edu.cn
工作电话
0592-2181862
Li Shuping
个人简历
李书平，男，博士、教授。现任厦门大学物理学科与技术学院副院长。一直从事半导体光电子材料与器件的理论与实验研究，近年来主要开展GaN基外延技术研究，完成了波长小于280nm的深紫外LED外延，并实现波长定制可调。主持过福建省自然科学基金，国家高技术研究发展计划（863计划）项目子课题等项目；已在Nanotechnology、Appl. Phys. Lett.等国内外学术刊物上发表论文100多篇，申请多项国家发明专利，获得厦门市科学技术进步三等奖1项。
研究领域
半导体光电子材料与器件的理论与实验研究
发表文章
Optical properties of InN studied by spectroscopic ellipsometry, Journal of Semiconductors 37(10), 102002 (2016)
Improved characteristics of ultraviolet AlGaN multiplequantum-well laser diodes with step-graded quantum barriers close to waveguide layers, Superlattices and Microstructures 97, 1-7 (2016)
Enhanced magneto-optical effects in composite coaxial nanowires embedded with Ag nanoparticles, Scientific Reports, 6, 29170 (2016)
Optimized design of multi-shell ZnO/TiO2/ZnSe nanowires decorated with Ag nanoparticles for photocatalytic applications, RSC Adv., 6, 71800–71806 (2016)
高Al 组分AlGaN 多量子阱结构材料发光机制探讨, 发光学报 37(5), 513-518 (2016)
Family of Cu@metal nanowires network for transparent electrodes on n-AlGaN, Phys. Status Solidi A 213(5) , 1209–1212 (2016)
Performance enhancement of AlGaN deep-ultraviolet lightemitting diodes with varied superlattice barrier electron blocking layer, Appl. Phys. A 122, 527 (2016)
Mg杂质调控高Al组分AlGaN光学偏振特性, 厦门大学学报(自然科学版) 55(2), 237-243 (2016)
Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg–Si codoping pair by MOCVD, J. Phys. D: Appl. Phys. 49, 115110 (2016)
Size effect on morphology and optical properties of branched ZnO/Si nanowire arrays, Physics Letters A 380, 1044–1048 (2016)
Improved p-type conductivity in Alrich AlGaN using multidimensional Mg-doped superlattices, Scientific Reports 6, 21897 (2016)
应变 AlN表面生长动力学, 厦门大学学报（自然科学版）54(3) 378-383 (2015)
分布式布拉格反射与小面积金属接触复合三维电极结构的 AlGaN基紫外LEDs设计, 厦门大学学报（自然科学版）54(4) 504-511 (2015)
Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection, SCIENTIFIC REPORTS 5:17227 (2015)
Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer, SUPERLATTICES AND MICROSTRUCTURES 85:59-66(2015)
Ultrawide photoresponse in ZnO/ZnSe coaxial nanowires with a threshold of 0.8 eV, INTERNATIONAL JOURNAL OF HYDROGEN ENERGY 40(34):10788-10794(2015)
Electro-optic Coefficient Enhancement of AlxGa1-xN via Multiple Field Modulations, ACS APPLIED MATERIALS & INTERFACES 7(32):17707-17712 (2015)
Facile synthesis of composition-tuned ZnO/ZnxCd1-xSe nanowires for photovoltaic applications, Nanoscale Research Letters 10:181 (2015)
Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier, IEEE PHOTONICS JOURNAL 7(1): 1400110 (2015)
Beneficial effect of alloy disorder on the conversion efficiency of ZnO/ZnxCd1-xSe coaxial nanowire solar cells, JOURNAL OF MATERIALS CHEMISTRY A 3(12), 6360-6365 (2015)
Kinetic process of nitridation on the ?-sapphire surface, Journal of Semiconductors 35(11), 116004 (2014)
Quantum state engineering with ultra-shortperiod (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection, Nanoscale, 6, 14733 (2014)
A beyond near-infrared response in a wide-bandgap ZnO/ZnSe coaxial nanowire solar cell by pseudomorphic layers, J. Mater. Chem. A, 2, 14571–14576 (2014)
High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability, SCIENTIFIC REPORTS 4, 5166 (2014)
Controllable synthesis of branched ZnO/Si nanowire arrays with hierarchical structure, Nanoscale Research Letters 9, 328 (2014)
Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons, SCIENTIFIC REPORTS 4, 4380 (2014)
Band engineering of GaN/AlN quantum wells by Si dopants, JOURNAL OF APPLIED PHYSICS 115, 124305 (2014)
Multipole plasmon resonances in self-assembled metal hollow-nanospheres, Nanoscale, 6, 3934–3940 (2014)
High Mg effective incorporation in Al-rich AlxGa1 ? xN by periodic repetition of ultimate V/III ratio conditions, Nanoscale Research Letters 9(40) 1-7 (2014)
高 Al 组分 Ⅲ 族族氮化物结构材料及其在深紫外 LED 应应用的进展，物理学进展，33(2), 43-56 (2013)
Vacuum Rabi Splitting of Exciton-Polariton Emission in an AlN Film, SCIENTIFIC REPORTS,3, 3551 (2013)
Copper Nanowires as Fully Transparent Conductive Electrodes, SCIENTIFIC REPORTS,3,2323 (2013)
Defect Suppression in AlN Epilayer Using Hierarchical Growth Units, J. Phys. Chem. C,117, 14158-14164(2013)
Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices, LASER & PHOTONICS REVIEWS,7(4),572-579 (2013)
Structural anomalies induced by the metal deposition methods in 2D silver nanoparticle arrays prepared by nanosphere lithography, Thin Solid Films 536,136–141 (2013)
Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs, AIP ADVANCES 3, 052103 (2013)
Type-II Core/Shell Nanowire Heterostructures and Their Photovoltaic Applications, Nano-Micro Lett. 4 (3), 135-141 (2012)
Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells, SCIENTIFIC REPORTS(2):816 (2012)
Band engineering of type-II ZnO/ZnSe heterostructures for solar cell applications, JOURNAL OF MATERIALS RESEARCH 27( 4), 730-733 (2012)
基于LabVIEW的外延片光致发光扫描系统, 光子学报, 41(7), 790-793(2012)
用于短波段发光二极管的二维光子晶体禁带研究，光学学报，32(6)，0623006-1-0623006-5(2012)
ZnO/ZnSe type II core-shell nanowire array solar cell, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 102, 15-18 (2012)
Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film, JOURNAL OF APPLIED PHYSICS, 111(11), 113528(2012)
Ohmic contact to n-AlGaN through bonding state transition at TiAl interface, JOURNAL OF APPLIED PHYSICS, 111(11), 113710(2012)
高Al组分AlGaN基紫外LED结构材料, 厦门大学学报，51(1)，17-21 (2012)
GaN薄膜的椭偏光谱研究，半导体技术，36(11) 821-825,865 (2011)
ZnO薄膜的椭圆偏振光谱研究，厦门大学学报，50(6)，971-974 (2011)
X-ray reflectivity and atomic force microscopy studies of MOCVD grown AI_xGa_(1-x)N/GaN superlattice structures，半导体学报，32(4)，043006 (2011)
半导体光电结构材料及其应用，厦门大学学报，50(2)，203-209（2011）
Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy, J. Mat. Res. 26(6) 775-780(2011)
An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires, J. Mat. Chem. 21(16) 6020-6026 (2011)
Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures, J. Mater. Res., 25(6) 1037-1040 (2010)
Growth Kinetic Processes of AlN Molecules on the Al-Polar Surface of AlN, J. Phys. Chem. A 114, 9028–9033(2010)
Sensitivity enhancement of longitudinally driven giant magnetoimpedance magnetic sensor using magnetoelastic resonance, Sensors and Actuators A 161 62-65(2010)
Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry, Optical Materials 32 891–895(2010)
Growth and characterization of type-II ZnO/ZnSe core/shell nanowire arrays, J. Mater. Res. 25(7) 1272-1277 (2010)
Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition, Science China (Technological Sciences), 53(3), 766-768 (2010)
Magnetoelastic resonance enhancement of longitudinally driven giant magnetoimpedance effect in FeCuNbSiB ribbons, PHYSICA B-CONDENSED MATTER, 405(1), 327-330 (2010)
Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy, APPLIED PHYSICS LETTERS 96, 101115 (2010)
申请或授权专利
选择超晶格位置掺杂的p型Ⅲ族氮化物材料的制备方法
AlN生长面复合基底的制备方法以及氮化物半导体器件
基于InN/GaN应变量子阱紫外LED结构及其制备方法
一种纳米结构量子态电注入发光测试方法
有效提高外量子效率的深紫外发光二极管及其制备方法
分布式布拉格反射与小面积金属接触复合三维电极
一种枝状异质结纳米线阵列结构材料的制备方法
一种基于二维晶格的紫外单波长MSM光电探测器
一种单层密排纳米微球阵列的制备方法
获奖
2009年厦门市科学技术进步三等奖
任教课程
本科生课程：热力学统计物理、半导体物理
研究生课程：非线性材料设计
其他信息
主要主持或参与科研项目
1. 国家重点研发计划：固态紫外光源量子应变体系结构设计与机理研究（2016.07－2021.06）
2. 国家“863”计划项目子课题：高铝组分氮化物材料制备技术研究（2014.01-2016.12）
3. 厦门市科技计划项目：新型半导体低维结构材料器件设计与制备研究（2011.08-2013.07）
4. 国家“863”计划项目子课题：深紫外LED外延生长及应用技术研究（2011.01－2013.12）
5. 国家自然科学基金重大研究计划培育项目：全同量子点晶格构筑及其量子态间耦合表征（2010.01-2012.12）
6. 厦门市科技计划项目：高效多结太阳能电池特性研究（2009.08-2011.08）
7. 国家自然科学基金重点专项：原位半导体纳米结构综合测试系统研制（2009.01-2011.12）
8. 福建省科技计划重点项目：GaN 基紫外LED 芯片制备（2007.05-2009.06）
9. 厦门市科技计划项目：稳定波长的高性能GaN基LED芯片（2006.1-2007.12）
10.国家“863”计划项目：GaN基半导体材料设计与关键外延技术开发（2006.10-2008.09）
11.福建省科技计划重点项目：0.25瓦蓝光LED芯片标准单元及其混合集成瓦级白光LEDs（2005.1-2006.12）
12.福建省科技计划重点项目：GaN基功率级LED芯片制备（2004.07-2007.06）
13.国家自然科学基金项目：III族氮化物异质界面的缺陷（2004.1-2006.12）
14.福建省自然科学基金：Ⅲ族氮化物异质界面模拟及实验研究（2004.05-2007.05）
15.校级自选课题项目：Schottky势垒高度的理论计算研究（2002.9-2004.7）
课题组网址：http://kanggroup.xmu.edu.cn/kanggroup
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